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  Datasheet File OCR Text:
 Power Transistors
2SB0937 (2SB937), 2SB0937A (2SB937A)
Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1260, 2SD1260A Features
* High forward current transfer ratio hFE * High-speed switching * N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.00.3 1.50.1
Unit: mm
8.50.2 6.00.2 3.40.3 1.00.1
4.40.5
Parameter Collector-base voltage (Emitter open) 2SB0937 2SB0937A
Symbol VCBO VCEO VEBO IC ICP PC Ta = 25C Tj Tstg
Rating -60 -80 -60 -80 -5 -2 -4 35 1.3 150 -55 to +150
Unit V
(6.5)
Collector-emitter voltage 2SB0937 (Base open) 2SB0937A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
V
V A A W B C C E Conditions Min -60 -80 Typ
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
Junction temperature Storage temperature
Electrical Characteristics TC = 25C 3C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0937 2SB0937A 2SB0937 2SB0937A IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time fT ton tstg tf
*
Symbol 2SB0937 2SB0937A VBE ICBO ICEO VCEO
Max
(7.6)
Unit V
IC = -30 mA, IB = 0 VCE = -4 V,IC = -2 A VCB = -60 V,IE = 0 VCB = -80 V,IE = 0 VCE = -30 V,IB = 0 VCE = -40 V,IB = 0 VEB = -5 V,IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -2 A IC = -2 A, IB = -8 mA VCE = -10 V, IC = -0.5 A, f = 1 MHz IC = -2 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V
-2.8 -1 -1 -2 -2 -2 1 000 2 000 10 000 -2.5 20 0.4 1.5 0.5
V mA
mA
Emitter-base cutoff current (Collector open) Forward current transfer ratio
mA V MHz s s s
VCE(sat)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q P Note) The part number in the parenthesis shows conventional part number.
2 000 to 5 000 4 000 to 10 000
(1.5)
Absolute Maximum Ratings TC = 25C
1
2
0.80.1 R = 0.5 R = 0.5 2.540.3 1.00.1 1.40.1 0.40.1 5.080.5 (8.5) (6.0) 1.3 3
2.00.5
4.40.5
0 to 0.4
14.40.5
3.0+0.4 -0.2
1.5+0 -0.4
Publication date: March 2003
SJD00018BED
1
2SB0937, 2SB0937A
PC Ta
50 -5
(1)TC=Ta (2)With a 50x50x2mm Al heat sink (3)Without heat sink (PC=1.3W) TC=25C
IC VCE
-10
IC VBE
VCE=-4V
Collector power dissipation PC (W)
40 (1) 30
-4
Collector current IC (A)
-3
Collector current IC (A)
IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -0.8mA -0.6mA
-8
-6
25C
20
-2
4.0mA
-4
TC=100C
-25C
10 (2) (3) 0 0 40 80 120 160
-1
-0.2mA -0.1mA
-2
0
0
-1
-2
-3
-4
-5
0
0
- 0.8
-1.6
-2.4
-3.2
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100
IC/IB=250
hFE IC
VCE=-4V
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
IE=0 f=1MHz TC=25C
105
Forward current transfer ratio hFE
-10
104
TC=100C
25C
103
-25C
-1
TC=100C -25C 25C
103
102
- 0.1
102
10
- 0.01 - 0.01
- 0.1
-1
-10
10 - 0.01
- 0.1
-1
-10
1 - 0.1
-1
-10
-100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
-100
Non repetitive pulse TC=25C
Rth t
103 (1)Without heat sink (2)With a 50x50x2mm Al heat sink
(1) (2)
Thermal resistance Rth (C/W)
-1 000
Collector current IC (A)
-10
ICP t=1ms IC t=10ms
102
10
-1
t=300ms
1
- 0.1
2SB0937A 2SB0937
10-1
- 0.01 -1
-10
-100
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00018BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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